- Frequency: DC-2.9GHz
Output Power: 220W(Max)
Linear Gain: 20.7dB
Efficiency: 67%
Voltage: 50V
Discrete Pre-matched 2.9GHz GaN Transistor(220W)
2.9GHz Discrete Unmatched GaN Transistor(220W)
製品概要
The GTH0-0029220S is a 220W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 2.9GHz on a 50V supply rail. The wide bandwidth of the GTH0-0029220S makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
