- Frequency: DC-3.7GHz
Output Power: 100W(Max)
Linear Gain: 21.4dB
Efficiency: 66%
Voltage: 50V
3.7GHz GaN Bare Die(80W)
3.7GHz GaN Bare Die(80W)
製品概要
The GD080 is an 100W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GD080 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both CW and pulsed mode of operations
