3.7GHz GaN Bare Die(80W) 画像

3.7GHz GaN Bare Die(80W)

3.7GHz GaN Bare Die(80W)

型番
GD080
製品カテゴリ
メーカ

製品概要

The GD080 is an 100W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GD080 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both CW and pulsed mode of operations

特長

  • Frequency: DC-3.7GHz
    Output Power: 100W(Max)
    Linear Gain: 21.4dB
    Efficiency: 66%
    Voltage: 50V

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