3.2GHz GaN Bare Die(135W) 画像

3.2GHz GaN Bare Die(135W)

3.2GHz GaN Bare Die(135W)

型番
GD135
製品カテゴリ
メーカ

製品概要

The GD135 is an 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GD135 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

  • Frequency: DC-3.2GHz
    Output Power: 150W(Max)
    Linear Gain: 18.8dB
    Efficiency: 66%
    Voltage: 50V

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