- Frequency: DC-3.2GHz
Output Power: 160W(Max)
Linear Gain: 18.5dB
Efficiency: 65%
Voltage: 50V
3.2GHz GaN Bare Die(160W)
3.2GHz GaN Bare Die(160W)
製品概要
The GD160 is a 160W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GD160 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
