- Frequency: DC-2.9GHz
Output Power: 250W(Max)
Linear Gain: 18.6dB
Efficiency: 66%
Voltage: 50V
2.9GHz GaN Bare Die(250W)
2.9GHz GaN Bare Die(250W)
製品概要
The GD250 is a 250W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 2.9 GHz on a 50V supply rail. The wide bandwidth of the GD250 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
