2.9GHz GaN Bare Die(250W) 画像

2.9GHz GaN Bare Die(250W)

2.9GHz GaN Bare Die(250W)

型番
GD250
製品カテゴリ
メーカ

製品概要

The GD250 is a 250W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 2.9 GHz on a 50V supply rail. The wide bandwidth of the GD250 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

  • Frequency: DC-2.9GHz
    Output Power: 250W(Max)
    Linear Gain: 18.6dB
    Efficiency: 66%
    Voltage: 50V

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