- Frequency: DC-6GHz
Output Power: 50W(Max)
Linear Gain: 21.2dB
Efficiency: 64%
Voltage: 50V
Discrete Pre-matched 6GHz GaN Transistor(50W)
6GHz Discrete Unmatched GaN Transistor(50W)
製品概要
The GT030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GT030D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.
