3.2GHz Discrete Unmatched GaN Transistor(150W) 画像

Discrete Pre-matched 3.2GHz GaN Transistor(150W)

3.2GHz Discrete Unmatched GaN Transistor(150W)

型番
GT135D
製品カテゴリ
メーカ

製品概要

The GT135D is a 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GT135D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.

特長

  • Frequency: DC-3.2GHz
    Output Power: 150W(Max)
    Linear Gain: 18.8dB
    Efficiency: 66%
    Voltage: 50V

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