- 材料: InGaAs
波長: 820-1650nm
Extended波長: ～2500nm
InGaAs&Extended InGaAs Photodiode
SUMMARY
Surface-illuminated photodiodes with low noise and high quantum efficiency are key components for short wavelength infrared(SWIR) quantum key distribution(QKD) and sensing applications.
FEATURES
- Material: InGaAs
Wavelength: 820-1650nm
Extended Wavelength: ～2500nm
