- Frequency: DC-8GHz
Output Power: 15W(Max)
Linear Gain: 20dB
Efficiency: 62%
Voltage: 50V
Discrete Pre-matched 8GHz GaN Transistor(15W)
SUMMARY
The GTH0-0008015S is a 15W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 8.0GHz on a 50V supply rail. The wide bandwidth of the GTH0-0008015S makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
