- Frequency: DC-3.2GHz
Output Power: 200W(Max)
Linear Gain: 18.4dB
Efficiency: 64%
Voltage: 50V
3.2GHz GaN Bare Die(200W)
SUMMARY
The GD200 is a 200W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2 GHz on a 50V supply rail. The wide bandwidth of the GD200 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
