Discrete Pre-matched 3.7GHz GaN Transistor(110W) image

Discrete Pre-matched 3.7GHz GaN Transistor(110W)

PART NO.
GT090D
CATEGORY
SUPPLIER

SUMMARY

The GT090D is a 110W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GT090D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.

FEATURES

  • Frequency: DC-3.7GHz
    Output Power: 110W(Max)
    Linear Gain: 21.6dB
    Efficiency: 67%
    Voltage: 50V

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