Discrete Pre-matched 3.2GHz GaN Transistor(150W) image

Discrete Pre-matched 3.2GHz GaN Transistor(150W)

PART NO.
GT135D
CATEGORY
SUPPLIER

SUMMARY

The GT135D is a 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GT135D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.

FEATURES

  • Frequency: DC-3.2GHz
    Output Power: 150W(Max)
    Linear Gain: 18.8dB
    Efficiency: 66%
    Voltage: 50V
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